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DG2034
New Product
Vishay Siliconix
Single 4:1 Low rON Multiplexers
FEATURES
D D D D D D Low Voltage Operation (1.8 to 5.5 V) Low On-Resistance - rDS(on): 4 W Off-Isolation and Crosstalk: - 55 dB @ 10 MHz Fast Switch - 25 ns tON Low Charge Injection - QINJ: 4.7 pC Low Power Consumption - 4 mW
BENEFITS
D High Accuracy D High Bandwidth D TTL and Low Voltage Logic Compatibility D Low Power Consumption D Reduced PCB Space
APPLICATIONS
D Mixed Signal Routing D Portable and Battery Operated Systems D Low Voltage Data Acquisition D Modems D PCMCIA Cards
DESCRIPTION
The DG2034 is a low voltage, low rON, high bandwidth single 4 to 1 analog multiplexer designed for high performance switching of analog and video signals. Combining low power; fast switching; low on-resistance, flatness and matching; and small physical size, the DG2034 is ideal for portable and battery applications. Built on Vishay Siliconix's low voltage CMOS process, the DG2034 has an epitaxial layer which prevents latchup. Break-before-make is guaranteed.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
12-Pin QFN (3 X 3 mm)
A0 12 NC 11 Logic S1 GND S3 1 2 3 9 8 7 S2 COM S4 A1 10 A0 S1 GND S3 EN
MSOP-10
1 2 3 4 5 Top View Logic 10 9 8 7 6 A1 S2 COM S4 V+
4 EN
5 NC Top View
6 V+
TRUTH TABLE A1
X 0 0 1 1
A0
X 0 1 0 1
EN
0 1 1 1 1
ON Switch
None S1 S2 S3 S4
ORDERING INFORMATION Temp Range
-40 to 85C 40
Package
MSOP-10 12-Pin QFN (3 x 3 mm)
Part Number
DG2034DQ DG2034DN www.vishay.com
Document Number: 72418 S -31808--Rev. A, 01-Sept-03
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DG2034
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V AX, EN, SX, COMa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . #50 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . #100 mA (Pulsed at 1ms, 10% duty cycle) Power Dissipation (Package)b QFN-12 (3 x 3 mm)c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850 mW MSOP-10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320 mW Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150C Notes: a. Signals on SX, DX, EN or AX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 4.0 mV/_C above 70_C.
New Product
SPECIFICATIONS (V+ = 3 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Match rON Flatness d, f Currentg VANALOG rON DrON rON Flatness IS(off) ICOM(off) ICOM(on) V+ = 3.3 V, VS = 1 V / 3 V VCOM = 3 V / 1 V, VEN = 0 V V+ = 3.3 V VCOM = VS = 1 V / 3 V V+ = 2.7 V, VCOM = 0.5 V/1.5 V/2.0 V IS = 10 mA Full Room Full Room Room Room Full Room Full Room Full -1 -10 -1 -10 -1 -10 0 4 0.1 0.3 0.3 0.3 0.3 V+ 7 9 0.3 1.5 1 10 1 10 1 10 nA V
Limits
-40 to 85_C
Symbol
V+ = 3 V, "10%, VAL = 0.4, VAH = 2.0 Ve
Tempa
Minc
Typb
Maxc
Unit
W
Off Leakage
COM Off Leakage Currentg Channel-On Leakage Currentg
Digital Control
Input Currentd Input High Voltaged Input Low Voltaged IA or IEN VAH or VENH VAL or VENL VA/EN = 0 or V+, See Truth Table Full Full Full -1.0 2.0 0.4 1.0 mA V
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Timed Transition Time Charge Injectiond Off-Isolation Off Isolationd Channel-to-Channel Channel to Channel Crosstalkd Off Capacitanced COM Off Capacitanced COM On Capacitanced tON tOFF tD ttrans QINJ OIRR XTALK CS(off) CCOM(off) CCOM(on) V+ = 2.7 V, f = 1 MHz , VS = 1.5 V/0 V, VS = 0 V/1.5 V, RL = 300 W CL = 1 nF, Vgen = 0 V, Rgen = 0 W RL = 50 W CL = 5 pF W, RL = 50 W CL = 5 pF W, f = 1 MHz f = 10 MHz f = 1 MHz f = 10 MHz VS = 1.5 V, RL = 300 W Room Full Room Full Room Room Full Room Room Room Room Room Room Room Room 25 15 10.5 30 -4.7 -73 -54 -77 -59 14 46 67 p pF dB 45 55 pC 35 45 25 35 ns
Power Supply
Power Supply Range Power Supply Currentd V+ I+ V+ = 3.3 V, VA/EN = 0 or 3.3 V, See Truth Table Full 2.7 3.3 1.0 V mA
Notes: a. Room = 25C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, not subjected to production test. e. VA, EN = input voltage to perform proper function. f. Difference of min and max values. g. Guaranteed by 5 V testing. www.vishay.com Document Number: 72418 S -31808--Rev. A, 01-Sept-03
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DG2034
New Product
Vishay Siliconix
SPECIFICATIONS (V+ = 5 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Match rON Flatness d, f Off Leakage Current COM Off Leakage Current Channel-On Leakage Current VANALOG rON DrON rON Flatness IS(off) ICOM(off) ICOM(on) V+ = 5.5 V, VS = 1 V / 4.5 V VCOM = 4.5 V / 1 V, VEN = 0 V V+ = 4.5 V, VCOM = 1.5 V/2.5 V/3.5 V IS = 10 mA Full Room Full Room Room Room Full Room Full Room Full -1 -10 -1 -10 -1 -10 0 3 0.16 0.6 0.5 0.5 0.5 V+ 5.5 7 0.5 1.5 1 10 1 10 1 10 nA W V
Limits
-40 to 85_C
Symbol
V+ = 5 V, "10%, VAL = 0.8 or VAH = 2.4 Ve
Tempa
Minc
Typb
Maxc
Uni t
V+ = 5.5 V, VCOM = VS = 1 V / 4.5 V
Digital Control
Input Currentd Input High Voltaged Input Low Voltaged IAH or IENH VAH or VENH VAL or VENL VA or VEN = 0 or V+, See Truth Table Full Full Full -1.0 2.4 0.8 1.0 mA V
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Timed Transition Time Off-Isolation Off Isolationd Channel-to-Channel Channel to Channel Crosstalkd Charge Injectiond Off Capacitanced COM Off Capacitanced COM On Capacitanced tON tOFF tD ttrans OIRR XTALK QINJ CS(off) CCOM(off) CCOM(on) V+ = 5.0 V, f = 1 MHz VS = 3 V/0 V, VS = 0 V/3 V, RL = 300 W RL = 50 W CL = 5 pF W, RL = 50 W CL = 5 pF W, f = 1 MHz f = 10 MHz f = 1 MHz f = 10 MHz VS = 3.0 V, RL = 300 W Room Full Room Full Room Room Full Room Room Room Room Room Room Room Room 18 12 10.5 25 -73 -53.5 -77 -60.2 -4.4 13 43 64 p pF pC dB 40 50 30 40 20 30 ns
CL = 1 nF, Vgen = 0 V, Rgen = 0 W
Power Supply
Power Supply Range Power Supply Current V+ I+ V+ = 5.5 V, VA/EN = 0 or 5.5 V, See Truth Table Full 4.5 5.5 1.0 V mA
Notes: a. Room = 25C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, not subjected to production test. e. VA, EN = input voltage to perform proper function. f. Difference of min and max values.
Document Number: 72418 S -31808--Rev. A, 01-Sept-03
www.vishay.com
3
DG2034
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM and Supply Voltage rON vs. Analog Voltage and Temperature
12 10 rON - On-Resistance (W)
5.0 4.5 rON - On-Resistance (W) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
V+ = 2.7 V C B A V+ = 4.5 V C B A
8 6 4
V+ = 1.8 V V+ = 2.7 V V+ = 3.3 V V+ = 5.5 V
2 0 0 1 2 3 4 5 6 VCOM - Analog Voltage (V)
A = 85_C B = 25_C C = -40_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.0 0.0
VCOM - Analog Voltage (V)
10000
Supply Current vs. Temperature
V+ = 5.5 V
Supply Current vs. Input Switching Frequency
10 m 1m I+ - Supply Current (A) 100 m 10 m 1m 100 n 10 n V+ = 5.5 V
I+ - Supply Current (pA)
1000
100 -75 -50 -25 0 25 50 75 100 125 Temperature (_C)
1n 10
100
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
10000
Leakage Current vs. Temperature
V+ = 5.5 V VCOM = 4.5 V VS = 1.0 V Leakage Current (pA)
400 200 0 -200 -400 -600 -800 -1000 -1200
Leakage vs. Analog Voltage
V+ = 5.5 V
Leakage Current (pA)
1000
100
IS( off )
ICOM(on)
IS(off)
ICOM(off)
10 ICOM( on ) ICOM( off ) 1 -75 -50 -25 0 25 50 75 100 125
-1400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VS - Analog Voltage (V) Document Number: 72418 S -31808--Rev. A, 01-Sept-03
Temperature (_C) www.vishay.com
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DG2034
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Temperature
30 25 20 15 10 tOFF V+ = 5.5 V 5 0 -80 -60 -40 -20 tON V+ = 5.5 V tON V+ = 3.3 V Loss, OIRR, X TALK (dB) 20 0 -20 -40 -60 XTALK -80 -100 -120 0 20 40 60 80 100 120 140 10 k 100 k 1M 10 M 100 M 1G Temperature (_C) Frequency (Hz) V+ = 3.3 V RL = 50 W
Vishay Siliconix
Insertion Loss, Off -Isolation Crosstalk vs. Frequency
Loss
t ON , t OFF - Switching Time (ns)
OIRR
tOFF V+ = 3.3 V
2.2
Switching Threshold vs. Supply Voltage
3 2
Charge Injection vs. Analog Voltage
V+ = 5.5 V
VT - Switching Threshold (V)
1.8
Q - Charge Injection (pC)
1 0 -1 -2 -3 -4 -5 CL = 1 nF V+ = 3.3 V V+ = 1.8 V
1.4
1.0
0.6
0.2 1 2 3 4 5 6
-6 0 1 2 3 4 5 6 VCOM - Analog Voltage (V)
V+ - Supply Voltage (V)
35
Transistion Time vs. Temperature
RL = 300 W
30 tTRANS- , V+ = 3.0 V 25 tTRANS+, V+ = 3.3 V tTRANS- , V+ = 5.5 V 20
15 tTRANS+, V+ = 5.5 V 10 -80 -60 -40 -20 0 20 40 60 80 100 120 140
Temperature (_C)
Document Number: 72418 S -31808--Rev. A, 01-Sept-03
www.vishay.com
5
DG2034
Vishay Siliconix
TEST CIRCUITS
V+ Logic Input Switch Output VOUT RL 300 W CL 35 pF VINH VINL tOFF VOUT tr <5 ns tf <5 ns
New Product
50%
Switch Input VIN
V+ NO or NC IN GND COM
90%
0.9 x VOUT
Switch Output
0V tON
CL (includes fixture and stray capacitance) VOUT = VIN RL RL + rON
Note:
Logic input waveform is inverted for switches that have the opposite logic sense control
Figure 2. Switching Time
V+ Logic Input VO RL 300 W GND CL 35 pF VINH VINL tr <5 ns tf <5 ns
V+ VNO VNC NO NC IN COM
VNC = VNO VO Switch Output 0V
90%
tD
tD
CL (includes fixture and stray capacitance)
Figure 3. Break-Before-Make
+15 V V+ VS1 VS2 NO or NC NC or NO IN GND RL 300 W CL 35 pF VS1 V01 Switch Output CL (includes fixture and stray capacitance) VO = VS RL RL + rON VS2 V02 90% COM VO tr <5 ns tf <5 ns
Logic VINH Input VINL
50% tTRANS+
tTRANS-
10%
Figure 4. Transition Time
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Document Number: 72418 S -31808--Rev. A, 01-Sept-03
DG2034
New Product
TEST CIRCUITS
V+ VO Rg V+ COM IN GND NO or NC CL 1 nF VO IN OFF ON OFF DVO
Vishay Siliconix
Vg
Q = DVO x CL IN dependent on switch configuration Input polarity determined by sense of switch.
VIN = 0 - V+
Figure 5. Charge Injection
V+
C
V+ VS Rg = 50 W IN 0 V or 2.4 V VOUT NC or NO VIN NO or NC COM 50 W
GND VOUT VIN
XTALK Isolation = 20 log C = RF bypass
Figure 6. Crosstalk
V+
V+
C
V+
C
NO or NC Rg = 50 W 0V, 2.4 V IN GND
COM RL 50 W 0 V, 2.4 V GND
COM Meter
IN
NO or NC
HP4192A Impedance Analyzer or Equivalent f = 1 MHz
Off Isolation = 20 log C = RF Bypass
VCOM VNO/NC
Figure 7. Off Isolation
Document Number: 72418 S -31808--Rev. A, 01-Sept-03
Figure 8. Source/Drain Capacitances
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